| PART |
Description |
Maker |
| SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package
600V Silicon Carbide Ultrafast Schottky Diode
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD62003109 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER 4 A, SILICON CARBIDE, RECTIFIER DIODE
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| UF3001 UF3002 UF3003 UF3004 UF3005 UF3006 UF3007 |
Ultra Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT?3.0A
|
Gulf Semiconductor
|
| GC2X100MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| C2D10120D |
Silicon Carbide Schottky Diode
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SHD625051 SHD625051P SHD625051D SHD625051N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| GAP05SLT80-220 |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| SHD626150 SHD626150D SHD626150N SHD626150P |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
| C4D15120A |
Silicon Carbide Schottky Diode
|
Cree
|
